High-frequency capacitance-voltage (C C C-V V V ) measurements have been made on ultrathin oxide metal-oxide-semiconductor (MOS) capacitors. The sensitivity of extracted oxide thickness to series resistance and gate leakage is demonstrated. Guidelines are outlined for reliable and accurate estimation of oxide thickness from C C C-V V V measurements for oxides down to 1.4 nm.

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We demonstrate 1.6Tbps Silicon Photonic Integrated Circuit (SiPIC) meeting co-packaged optics requirements for network switch applications. The SiPIC has sixteen 106Gbps PAM4 optical channels, including lasers, modulators and V-grooves. Post-FEC error-free operation over temperature is demonstrated.

A 400Gbps PAM-4 fully integrated DR4 silicon photonics transmitter with four heterogeneously integrated DFB lasers has been demonstrated for data center applications over a temperature range of 0~70°C and a reach of up to 2km