This paper studies the Floating-Gate MOSFET (FGMOSFET) for its importance in biomedical engineering and many modern low-power applications. A practical model for FGMOSFET is highly needed to be used in circuits simulators. In this work, a spice model for FGMOSFET is introduced and can be inserted in any circuit simulator such as Spector and various SPICE programs (i.e. HSPICE, WinSPICE, etc.). Firstly, the parasitic capacitances needed for FGMOSFET is revised for 0.13um CMOS technology. Secondly, a model for both mutual and output transconductance is represented. The model is based on n-channel FGMOSFET and valid from linear to saturation regions. The model considers velocity saturation as short channel effect and bulk charge due to drain-to-source voltage as second order effect. The results were verified by the spice simulation BSIM3v3 model in Cadence. The model is not a charge conservative.