This work aimed to study the effect of magnetic fields on the current-voltage (I-V) characteristics of a chitosan membrane. The study consists of the plateau length, limiting current density (LCD), and the ratio of resistance of region III (RIII) and region I (RI) (RIII/RI). The chitosan membranes were prepared by a casting method using chitosan as a matrix and acetic acid as a solvent. The chitosan membranes polymerized under a strong magnetic field of 1.5 mT applied along the membrane surface with various times i.e. 2, 4, 8, and 12 h. The I-V measurements were conducted using a cell model with two working electrodes made of platinum and two reference electrodes connected to a voltmeter. The electrolyte solutions used were HCl and CaCl2 with a concentration of 0.025 M. All experiments were carried out at a room temperature of 28.6 °C. The results showed that the plateau length, LCD and RIII/RI of the chitosan membrane is influenced by the magnetic field given during the membrane formation reaction. The magnitude of the impact depends on the length of exposure. These results can be used in tailoring the chitosan membrane according to the application needed.