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Recently, single photons have been observed emanating from point defects in two-dimensional (2D) materials including WSe 2 , WS 2 , hexagonal-BN, and GaSe, with their energy residing in the direct electronic bandgap. Here, we report single photon emission from a nominal weakly emitting indirect bandgap 2D material through deterministic strain induced localization. A method is demonstrated to create highly spatially localized and spectrally well-separated defect emission sites in the 750-800 nm regime in a continuous epitaxial film of few-layer WSe 2 synthesized by a multistep diffusion-mediated gas source chemical vapor deposition technique. To separate the effects of mechanical strain from the substrate or dielectric-environment induced changes in the electronic structure, we created arrays of large isotropically etched ultrasharp silicon dioxide tips with spatial dimensions on the order of 10 lm. We use bending based on the small radius of these tips-on the order of 4 nm-to impart electronic localization effects through morphology alone, as the WSe 2 film experiences a uniform SiO 2 dielectric environment in the device geometry chosen for this investigation. When the continuous WSe 2 film was transferred onto an array of SiO 2 tips, an $87% yield of localized emission sites on the tips was observed. The outcomes of this report provide fundamental guidelines for the integration of beyond-lab-scale quantum materials into photonic device architectures for all-optical quantum information applications.

A study undertaken to measure the resistance of spark channels in air with two different current waveforms is presented. In one experiment, the spark was created by a Marx generator. In this case, the gap length was maintained at 12.8 cm, and the current flowing through the spark had a peak current lying in the range of 0.2-2.2 kA. The decay time of the current was larger than 100 µs. In the other experiment, the spark was created by a current generator. In that experiment, the gap length was maintained at 1 cm, and the current flowing through the spark had peak-current amplitudes in the range of 35-48 kA. The decay time of the current was larger than 500 µs. The results show that the resistance of spark channels initially decreases, reaches a minimum value, and then recovers as the current in the spark gap decreases. The minimum resistance of the spark channel decreases with an increasing peak current. The results are compared with various theories that attempt to predict the temporal variation of the resistance of spark channels. The comparison shows that further developments in the existing theoretical models are needed in order to reproduce with better accuracy the dynamic behavior of the channel resistance.