Articles you may be interested inInGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination Appl. Phys. Lett. 105, 033506 (2014); 10.1063/1.4891334 High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells Appl. Phys. Lett. 104, 091111 (2014); 10.1063/1.4867023Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thicknessIn this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations. V C 2014 AIP Publishing LLC.

No abstract

Nominally lattice matched InAlN/GaN was grown by plasma-assisted molecular beam epitaxy, and the intrinsic microstructure was investigated via x-ray diffraction, transmission electron microscopy, and atom probe tomography. The InAlN showed a cellular structure, which was comprised of ∼10 nm wide Al-rich cores and ∼1 nm In-rich InAlN intercellular boundaries. Despite the strong laterally non-uniform In distribution, both vertical and lateral lattices are unperturbed by the cellular structure, as evidenced by strong thickness fringes in on-axis ω−2θ high resolution x-ray diffraction scans, coherence lengths derived from on-axis (0002) and off-axis (101¯2) ω−2θ high resolution x-ray diffraction scans, and a modified Williamson-Hall analysis for on-axis reflections.

No abstract

Pulsed laser atom probe tomography (APT) of InxGa1−xN single quantum well (SQW) grown on semipolar (101¯1¯) GaN orientation estimates the interior atomic composition within the SQW at 6.5±0.7 at. % In, 46.2±0.7 at. % Ga, and 47.3±0.7 at. % N. The atom probe analysis is performed in both “top-down” and “cross-section” orientations. Self-consistent Schrödinger–Poisson simulation employing structural and compositional parameters obtained from APT results estimates the polarization field within the SQW at 720 kV/cm. A statistical method for the evaluation of indium homogeneity within the SQW is also considered.