No abstract

A 2-W monolithic microwave integrated circuit power amplifier, operating between 3.3 and 3.8 GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electronic mobility transistor for the applications of wideband code division multiple access, wireless local loop, and multichannel multipoint distribution service, is demonstrated. This two-stage amplifier is designed to fully match 50 input and output impedances. With a dual-bias configuration, the amplifier possesses the characteristics of 30.4 dB small-signal gain and 34 dBm 1-dB gain compression power with 37.1% power added efficiency. Moreover, with a single carrier output power level of 24 dBm, high linearity with a 43.5-dBm third-order intercept point operating at 3.5 GHz is also achieved. Index Terms-Monolithic microwave integrated circuit (MMIC), pseudomorphic high electronic mobility transistor (PHEMT), power amplifier (PA), wideband code division multiple access (W-CDMA).