Rhombohedral nickel sulfide thin films were deposited on c-sapphire substrate via the atomic layer deposition (ALD)
method using nickel acetylacetonate [Ni(acac)2] as nickel
and H2S gas as sulfur precursors. The self-limiting nature
of the ALD process is obtained in the temperature range of 200–240
°C, which provides crystalline NiS thin films without further
annealing. A growth rate of ∼0.2 Å/cycle was observed
at 200 °C. As-deposited thin films were studied for non-enzymatic
electrochemical glucose sensing. The films exhibit an excellent sensitivity
of 5.78 μA mM–1cm–2 and
a low detection limit of 0.052 μM with a very small response
time of <2 s.
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