Granular superconductivity at high temperatures in graphite can emerge at certain two-dimensional (2D) stacking faults (SFs) between regions with twisted (around the c-axis) or untwisted crystalline regions with Bernal (ABA…) and/or rhombohedral (ABCABCA…) stacking order. One way to observe experimentally such 2D superconductivity is to measure the frozen magnetic flux produced by a permanent current loop that remains after removing an external magnetic field applied normal to the SFs. Magnetic force microscopy was used to localize and characterize such a permanent current path found in one natural graphite sample out of ∼50 measured graphite samples of different origins. The position of the current path drifts with time and roughly follows a logarithmic time dependence similar to the one for flux creep in type II superconductors. We demonstrate that a ≃10 nm deep scratch on the sample surface at the position of the current path causes a change in its location. A further scratch was enough to irreversibly destroy the remanent state of the sample at room temperature. Our studies clarify some of the reasons for the difficulties of finding a trapped flux in a remanent state at room temperature in graphite samples with SFs.

Tunneling atomic force microscopy (TUNA) was used at ambient conditions to measure the current-voltage (I-V ) characteristics at clean surfaces of highly oriented graphite samples with Bernal and rhombohedral stacking orders. The characteristic curves measured on Bernal-stacked graphite surfaces can be understood with an ordinary self-consistent semiconductor modeling and quantum mechanical tunneling current derivations. We show that the absence of a voltage region without measurable current in the I-V spectra is not a proof of the lack of an energy band gap. It can be induced by a surface band bending due to a finite contact potential between tip and sample surface. Taking this into account in the model, we succeed to obtain a quantitative agreement between simulated and measured tunnel spectra for band gaps (12 . . . 37) meV, in agreement to those extracted from the exponential temperature decrease of the longitudinal resistance measured in graphite samples with Bernal stacking order. In contrast, the surface of relatively thick graphite samples with rhombohedral stacking reveals the existence of a maximum in the first derivative dI/dV , a behavior compatible with the existence of a flat band. The characteristics of this maximum are comparable to those obtained at low temperatures with similar techniques.