Low-frequency noise measurements were made in the temperature range of 77-340 K on submicrometer resistors made from GaAs gro~n by molecular-beam epitaxy. Two types of noise were found, depending on surface treatment. One type consisted of discrete spectral components which showed no anomalous statistical behavior. The other type was a small l/f component which sho~ed anomalously large variations in spectral density, with these variations themselves having a 1/f spectrum.