Physical models are used to determine the ultimate potential performance of carbon nanotube interconnects and compare them with minimum-size copper wires implemented at various technology generations. Results offer important guidance regarding the nature of carbon nanotube technology development needed for improving interconnect performance. Since wave propagation is slow in a single nanotube, nanotube bundles with larger wave speeds must be used. At the 45-nm node (year 2010), the performance enhancement that can be achieved by using nanotube bundles is negligible, and at the 22-nm node (year 2016) it can be as large as 80%.

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The performances of minimum-size copper and carbon nanotube interconnects are compared for various ITRS generations. Results offer important guidance regarding the nature of carbon nanotube technology development needed for improving interconnect performance. Since wave propagation is slow in a single nanotube, nanotube-bundles with larger wave speeds must be used. At the 45nm node (year 2010), the performance enhancement that can be achieved by using nanotube-bundles is negligible, and at the 22nm node (year 2016) it can be as large as 30% and 80% if carbon nanotubes with electron mean free paths of 5~ and 1 0~. respectively, can be fabricated.

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Recent development in fabrication technology of planar two-dimensional (2D) materials has brought up possibilities of numerous novel applications. Our recent analysis has revealed that by definition of p-n junctions through appropriate patterned doping of 2D semiconductors, ideal exponential I-V characteristics may be expected. However, the theory of 2D junctions turns out to be very much different to that of the standard bulk junctions. Based on this theory of 2D diodes, here we construct for the first time, a model to describe the 2D Bipolar Junction Transistors (2D-BJTs). We derive the smallsignal equivalent model, and estimate the performance of a 2D-BJT device based on Graphone as the example material. A current gain of about 138 and maximum threshold frequency of 77GHz, together with a power-delay product of only 4fJ per 1m lateral width is expected at an operating voltage of 5V. Also, we derive necessary formulae and a new approximate solution for continuity equation in the 2D configuration, which have been verified against numerical solutions. E nE pE J J J   , C nC pC J J J   , and B E C J J J   . Hence, the common-base and common-emitter current gains are found to be C nE nC C E E nE nC J J J J J J J J