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The paper describes results of investigation on sputtered NiFe Films to determine the sputter deposition condition that could produce magnetic field sensors with the desired magnetic properties. The magnetic materials used in such devices should have a low coercive force, a low anisotropy field and a low magnetization dispersion, α50. .The results of systematic investigation of radio-frequency (RF) sputtered, RF biased, 82-18 % NiFe films showed (i) Improved Kobelev methods were applied to magneto-optic measurement techniques, suppress the magnetization ripples when subjected under the application of dc field. (ii) Anisotropy field results indicated an inverse trend with increasing substrate temperature (iii) the experimental measurements on magnetization dispersion relatively constant up to 200 °C with α50 approximately 1.2°, it then increases more sharply to about 3.5° at 400 °C substrate temperature. The work also provide understanding of the effects on the magnetic properties of sputtered magnetic films that is very limited as current literature is almost entirely limited to evaporated magnetic films.

This paper presents an area efficient Field Programmable Gate Array (FPGA) based digital design of a processing module for MTI radar. Signal contaminated with noise and clutter is modelled to test the efficacy of the design algorithms. For flexibility of design and to achieve optimized results, we have combined the high-level utility of MATLAB with the flexibility and optimization on FPGA for this implementation. Two- and three-pulse cancellers are chosen for design due to its simplicity in both concept and implementation. The results obtained are efficient in terms of enhanced throughput per Slice (TPA) of 1.146, that is, occupying fewer area resources on hardware while achieving optimized speed. The outcomes show that this design of MTI radar processor has many advantages, such as high processing precision, strong processing ability, real time, and low cost. All these advantages greatly contribute to the design requirements and make it appropriate for the application of high-speed signal processing.

82% Ni-Fe films have been prepared using Radio frequency (R.F) sputtered, R.F induced substrate bias. The results presented are of study of sputter films deposition at various RF substrate bias conditions so that suitable sputtering rate with optimum (target) composition could be determined for magnetoresistive sensing applications. Films have been sputtered with substrate temperature of 200° C, sputter gas (argon) pressure of 10mTorr with film thicknesses near 1000 °A. Substrate bias potential in the range 0 V to -400 V is varied in order to determine its dependence upon film composition and deposition rate. The result presented indicates the strong bias dependence upon film composition and deposition rate with most useful films for the application in concern could be produced at substrate bias potential in the range of -80 V to -120 V.