High k insulators, such as titanium oxide (TiO x ), have been obtained by Ti e-beam evaporation, using different thicknesses of 5nm, 10nm and 20nm with additional rapid thermal oxidation and annealing at temperature of 960°C for 40s. Characterization by Fourier transform infrared (FTIR) analyses reveals the Ti-O and Si-O bonds, which confirms titanium oxide formation. Raman spectroscopy identified that these films present rutile and anatase phases. These films have been used as gate insulators in nMOSFETs. These devices and MOS capacitors, with Al electrodes and final sintering at 450°C for 10min in forming gas, were fabricated. MOS capacitors were used to obtain capacitance-voltage (C-V) measurements, and to extract the Equivalent Oxide Thickness (EOT) from the films, resulting in values between 16.3nm and 19.7nm, and effective charge densities of about 10 11 cm -2 . nMOSFET electrical characteristics, such as threshold voltages between 0.39V and 0.43V and sub-threshold slopes between 61mV/dec and 100mV/dec, were obtained. These results indicated that the obtained TiO x films are suitable gate insulators for MOS devices.

Complimentary metal–oxide–semiconductor (CMOS) transistors with polycrystalline Si (poly-Si)/SiGe as the gate material are presented. The SiGe integration using a local CMOS process was developed. It uses a single n+-doped poly-Si0.7Ge0.3 gate instead of single n+- or double-doped poly-Si gate. After deposition, both the poly-Si and SiGe films used as gate layers were doped with phosphorus ions. The threshold, subthreshold, and low-frequency 1/ f noises of poly-Si/SiGe CMOS transistors are reported. Improvements in the performance of the poly-Si/SiGe CMOS transistor compared with the poly-Si gate CMOS transistor are presented, indicating that the presence of Ge in the gate material is beneficial, which agrees with results reported in the literature. The n-channel metal–oxide–semiconductor (n-MOS) transistor characteristics in the diode mode (V GS=V DS) are shown, followed by transconductance (G m) results. Improvements in the current–voltage (I–V) characteristics are observed when poly-Si/SiGe CMOS transistors are compared with poly-Si gate CMOS transistors. Another key point is the low-frequency 1/ f noise characteristic, which makes the latter transistors promising devices for RF applications.

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High k insulators for the next generation (sub-32 nm CMOS (complementary metal-oxide-semiconductor) technology), such as titanium-aluminum oxynitride (Ti w Al x O y N z ) and titaniumaluminum oxide (Ti w Al x O y ), have been obtained by Ti/Al e-beam evaporation, with additional electron cyclotron resonance (ECR) plasma oxynitridation and oxidation on Si substrates, respectively. The physical thickness values between 5.7 nm and 6.3 nm were determined by ellipsometry. These films have been used as gate insulators in MOS capacitors, which were fabricated with Al electrodes and final sintering time at 450 0 C for 10 min in forming gas. These capacitors were used to obtain capacitance-voltage (C-V) measurements. A relative dielectric constant of 3.9 was adopted to extract the Equivalent Oxide Thickness of films from C-V curves under strong accumulation condition, resulting in values between 1.9 and 1.7 nm, and the effective charge densities of about 10 11 cm -2 . These results indicate that the obtained