IntroductionA high performance 0.20pm logic technology has been developed with six levels of planarized copper interconnects. 0.15pm transistors (Lg,,,=0.15+0.04pm) are optimized for 1.8V operation to provide high performance with low power-delay products and excellent reliability. Copper has been integrated into the back-end to provide low resistance interconnects. Critical layer pitches for the technology are summarized in Table 1 and enable fabrication of 7.6pm2 6T SRAM cells.Isolation and Transistors CMP planarized shallow trenches with good electrical isolation down to n+/p+ spacings of 0.5pm were fabricated (Fig. 1). Dual gate 0.15pm transistors with 35A physical gate oxides (accumulation t,,=39A measured at Vg=+l .SV) were formed using super steep retrograde channels, shallow extensions and halos, relatively deep source/drain regions and 1 OOnm nitride spacers. CoSi, was selectively formed on the polysilicon gates and source/drain regions with a nominal sheet resistance of 9Wsq. Rapid thermal processing was utilized as much as possible throughout the flow to minimize transient enhanced dopant diffusion.Fig. 2 shows a typical SEM cross-section of a NMOS transistor with a gate length of 0.15pm. Well delineated shallow S/D extensions and the deeper S/D junctions are clearly observed. The saturation drive currents for nominal gate length NMOS and PMOS devices are shown in Fig. 3 . The nominal drive currents are 630pNpm for NMOS and 230pA/ym for PMOS at 1.8V. The off-state leakage currents of these devices are well below the worst case leakage specification of 2nA/pm. The drain induced barrier lowering (DIBL) measured on NMOS and PMOS devices is plotted as a function of Leff in Fig. 4. Good short channel characteristics are maintained down to effective channel lengths of O.1ym. The Vt roll-off for N and P devices in the linear and saturation regions are shown in Fig. 5. The Vt's are 0.44V and -0.46V for Nch and Pch respectively, at a gate length of 0.15pm and the associated subthreshold slopes are less than 90mv/dec. The use of nitrided gate oxides was investigated due to their superior hot carrier reliability. Fig. 6 compares the degradation under hot carrier stress of nitrided oxides to thermal oxides and highlights the improved reliability of NO-annealed oxides. Peak Gms comparable to those from thermal oxides were obtained (Fig. 7). A further advantage afforded by nitrided gate dielectrics is its superior boron blocking properties, Increasing the poly silicon doping in the P+ gate to reduce poly depletion resulted in only a 88mV Vt shift in nitrided oxides (Fig. 8) compared to a 300mV Vt shift in thermal oxides. A significant reduction in the inversion to, is achieved with the higher gate doping, resulting in improved device characteristics. NMOS transistor design focused on minimizing defect enhanced dopant re-distribution such as TED. To this end, the effect of different source/drain implant energies on NMOS transistor performance is shown in Fig. 9. The lower energy implant results in a significantl...

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JSTOR is a not-for-profit service that helps scholars, researchers, and students discover, use, and build upon a wide range of content in a trusted digital archive. We use information technology and tools to increase productivity and facilitate new forms of scholarship. For more information about JSTOR, please contact support@jstor.org. This content downloaded from 131.94.16.10 on Wed, 30 Dec 2015 09:16:08 UTC All use subject to JSTOR Terms and Conditions JUAN RAMON, ORTEGA Y LOS INTELECTUALES* to #. MNA de las caracteristicas mas destacadas del panorama cultural decimononico es la presencia del "intelectual" en la vida puiblica. En una 6poca en que la confianza parecia minada, el punto de vista del intelectual habia de considerarse autorizado, responsable y prestigioso. Este fen6meno se hizo particularmente visible en la Espafia de la Restauraci6n, al surgir una elite dirigente e influyente que anticipaba la aparici6n de los intelectuales del fin de siglo.' Arraigaba esa elite en la Instituci6n Libre de Ensefianza capitaneada por Francisco Giner de los Rios. El grupo krausista trat6 de desligarse de los supuestos tradicionales para diagnosticar los males del pais y hallar remedio al problema de Espafia. Rechazaba cualquier plan concreto de cambiar las estructuras sociales y aspiraba a cambiar a los hombres: "hacer hombres" era la f6rmula de Giner. Concebia 6ste su misi6n regeneradora * Este trabajo es una versi6n mas amplia y parcialmente revisada de la conferencia que di en La Rabida (Huelva) el 26 de junio de 1981 en el Primer Congreso Internacional Conmemorativo de Juan Ram6n Jimenez. Expreso nuevamente mi agradecimiento por su invitacion. Yo termine este trabajo en los primeros dias de 1981, y Francisco Javier Blasco Pascual, que en esos momentos publicaba su libro sobre La poetica de Juan Ramon Jimenez. Desarrollo, contextura y sistema (Salamanca, 1981), coincide conmigo en algfin argumento. Remito al lector interesado a los capitulos i, ii, y iii del excelente libro de Blasco Pascual. 1Veanse, por ejemplo, el interesante ensayo de E. Inman Fox, "El afio de 1899 y el origen de los 'intelectuales,'" en La crisis intelectual del 98 (Madrid, 1976), pags. 9-16; la colecci6n editada por J. C. Mainer, La crisis de fin de siglo: Ideologia y literatura (Barcelona, 1975) y J. LOpez Morillas, Hacia el 98: Literatura, sociedad, ideologia (Barcelona, 1972).329 This content downloaded from 131.94.16.10 on Wed, 30 Dec 2015 09:16:08 UTC All use subject to JSTOR Terms and Conditions 330 Richard A. Cardwell HR, 53 (1985)como "un sacerdocio espiritual," que debia convertirse en un ejemplo vivo.2 Posteriormente este ejemplo ejercio su encanto sobre la generacion de los Machado, Unamuno, Perez de Ayala y otros; e incluso sobre Juan Ramon y Ortega cuando hubieron de reconocer que la crisis espafiola era parte de una crisis general de valores y creencias de Occidente. Shaw y Ramsden han investigado esta crisis y la metodologia por medio de la cual los hombres del 98 encararon el problema y lo interpretaron.3 Estos hombres se vie...

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This volume of essays constitutes a critical reappraisal of a front-rank world author, Gabriel García Márquez, who was awarded the Nobel Prize for Literature in 1983. Apart from extending critical appreciation of his work to an English-reading public, its principal objective is to reflect the breadth and variety of critical approaches to literature applied to a single corpus of writing; here, the major novels (including Love in the Times of Cholera, 1986) and a selection of his short fiction are considered. The aim of this collection, given these dual objectives, is to extend knowledge of the work of García Márquez and introduce to both the general reader and to students of literature a plurality of current critical approaches to his rich variety of fictional techniques. The volume also includes a bibliography of criticism available in English and an English translation of the author's Stockholm Nobel acceptance address.