A new class of electron bean negative tone resist materials has been developed based on heterometallic rings. The initial resist performance demonstrates a resolution of 15 nm half‐pitch but at the expense of a low sensitivity. To improve sensitivity a 3D Monte Carlo simulation is used that utilizes a secondary and Auger electron generation model. The simulation suggests that the sensitivity can be dramatically improved while maintaining high resolution by incorporating appropriate chemical functionality around the metal–organic core. The new resists designs based on the simulation have the increased sensitivity expected and illustrate the value of the simulation approach.

The synthesis, structure and magnetic properties of the HAN-bridged tri-dysprosium complex [{(thd)Dy}HAN] (1) are described. The complex is an SMM that shows two relaxation processes owing to the presence of two geometrically distinct Dy sites in 1. Ab initio calculations reveal that the magnetic ground state of 1 is characterized by magnetic frustration.

The stable metallocene-butyl complexes [(Cp)M(Bu)] (M = Y, Dy) were synthesized and their reactivity towards to ferrocene and bulky N-heterocyclic carbenes investigated. Selective mono-deprotonation of ferrocene and a benzylic methyl group of IMes were observed, whereas a control reaction of (Cp)M with IMes resulted in a normal-to-abnormal NHC rearrangement.

A new class of negative-tone resist materials has been developed for electron beam and extreme ultraviolet lithography. The resist is based on heterometallic rings. From initial electron beam lithography studies, the resist performance demonstrated a resolution of 40-nm pitch but at the expense of a low sensitivity. To improve the sensitivity, we incorporated HgCl 2 and HgI 2 into the resist molecular design. This dramatically improved the resist sensitivity while maintaining high resolution. This improvement was demonstrated using electron beam and extreme ultraviolet lithography.

A negative tone heterometallic ring resist (HRR) based on a supramolecular assembly ½NH 2 ðallylÞ 2 ½Cr 7 NiF 8 ðpivÞ 16 with previously demonstrated resolution down to sub 10-nm lines is evaluated in terms of its flexibility to be processed either "wet" (spin cast and solvent developed) or "dry" (deposition and development by vacuum sublimation). The implemented sublimation hardware fits easily in the wafer load-lock chamber of extreme ultraviolet and electron beam exposure systems dedicated to research and development activities and allows for HRR films to be uniformly deposited or developed in the same vacuum environment. The HRR shows a sublimation rate dependence on temperature that obeys a Clausius-Clapeyron relation, with thermal stability up to 275°C. Flood exposures of the HRR show identical sensitivity between wet-and dry-deposited films, whereas contrast degradation is observed when dry development is initiated by increasing the temperature prior to system pump down. A modified sublimation setup allows for the dry development of exposed HRR samples inside the electron beam tool without breaking vacuum. In this case, nominally patterned 25 nm L/S are identically resolved at 30 keV for wet-or dry-developed HRR.