No abstract

Inspired by the densely covered capillary structure inside a dog's nose, we report an artificial nanostructure, i. e., poly(sodium p-styrenesulfonate)-functionalized reduced graphene oxide nanoscrolls (PGNS), with high structural perfection and efficient gas sensing applications. A facile supramolecular assembly is introduced to functionalize graphene with the functional polymer, combined with the lyophilization technique to massively transform the planar graphene-based nanosheets to nanoscrolls. Detailed characterizations reveal that the bioinspired nanoscrolls exhibit a wide-open tubular morphology with uniform dimensions that is structurally distinct from the previously reported ones. The detailed morphologies of the graphene-based nanosheets in each scrolling stage during lyophilization are monitored by cryo-SEM. This unravels an asymmetric polymer-induced graphene scrolling mechanism including the corresponding scrolling process, which is directly presented by molecular dynamics simulations. The fabricated PGNS sensors exhibit superior gas sensing performance with reliable repeatability, excellent linear sensibility, and, especially, an ultrahigh response ( R/ R = 5.39, 10 ppm) toward NO. The supramolecular assembly combined with the lyophilization technique to fabricate PGNS provides a strategy to design biomimetic materials for gas sensors and chemical trace detectors.

In As atmosphere, we analyzed the crystallization dynamics during post-growth annealing of Ga droplets residing at the top of self-assisted GaAs nanowires grown by molecular beam epitaxy. The final crystallization steps, fundamental to determining the top facet nanowire morphology, proceeded via a balance of Ga crystallization via vapor-liquid-solid and layer-by-layer growth around the droplet, promoted by Ga diffusion out of the droplet perimeter, As desorption, and diffusion dynamics. By controlling As flux and substrate temperature the transformation of Ga droplets into nanowire segments with a top surface flat and parallel to the substrate was achieved, thus opening the possibility to realize atomically sharp vertical heterostructures in III-As self-assisted nanowires through group III exchange.

A red nanowire LED with an InGaN bulk active region, directly grown on a p-Si (111) substrate, is demonstrated. The LED exhibits relatively good wavelength stability upon increasing injection current and narrowing of the linewidth without quantum confined Stark effect. Efficiency droop sets in at relatively high injection current. The output power and external quantum efficiency are 0.55 mW and 1.4% at 20 mA (20 A/cm2) with peak wavelength of 640 nm, reaching 2.3% at 70 mA with peak wavelength of 625 nm. The operation on the p-Si substrate results in large carrier injection currents due to a naturally formed tunnel junction at the n-GaN/p-Si interface and is ideal for device integration.

Time‐resolved photoluminescence experiments in high quality InAs/GaAs quantum dots clearly show the interplay between radiative recombination and thermalization processes. In particular from temperature dependent PL spectra, we prove that the carrier recombination dynamics is ruled by the thermal population in optically inactive exciton states, related to the population of the first excited hole levels. Moreover time‐resolved spectra do not show any relaxation bottleneck, indicating an efficient carrier capture and a fast energy relaxation of the photogenerated carriers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)