A series resistance induced by cell interconnections will lead to a worse TCPMPP of solar modules compared with cells.

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In this paper, we evaluate p-type passivated emitter and rear locally diffused (p-PERL) and n-type passivated emitter and rear totally diffused (n-PERT) large area silicon solar cells featuring nickel/copper/silver (Ni/Cu/Ag) plated front side contacts. By using front emitter p-PERL and rear emitter n-PERT, both cell structures can be produced with only a few adaptations in the entire process sequence because both feature the same front side design: homogeneous n + diffused region with low surface concentration, SiO 2 /SiN x :H passivation, Ni/Cu/Ag plated contacts. Energy conversion efficiencies up to 20.5% (externally confirmed at FhG-ISE Callab) are presented for both cell structures on large area cells together with power-loss analysis and potential efficiency improvements based on PC1D simulations. We demonstrate that the use of a rear emitter n-PERT cell design with Ni/Cu/Ag plated front side contacts enables to reach open-circuit voltage values up to 676 mV on 1-2 Ω cm n-type CZ Si. We show that rear emitter n-PERT cells present the potential for energy conversion efficiencies above 21.5% together with a strong tolerance to wafer thickness and bulk resistivity.

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