A flexible X-ray sensor array using IGZO-TFT was prototyped. It is known that IGZO-TFT shows faster read-out speed compared to amorphous silicon TFT. With such superior characteristics, IGZO-TFT yield dynamic motion X-ray detectors with great performance. In addition, flexible substrate realizes lightweight and robust detector. In this paper we evaluated the IGZO-TFT flexible sensor array and it showed good characteristics.

We developed a medical device to measure blood glucose levels automatically. This device is consisting of a micropump of PZT (Lead Zirconate Titanate) actuator to support during extraction of blood and administration of insulin. Thus, the micro-pump should be miniaturized because it needs to be mounted on the device, so that the device is not too big to be carried. However, a decreasing of piezoelectricity becomes a problem when volume of thinned PZT is reduced. Thus, we intended to create a PZT film which shows high piezoelectricity. In this study, it has been reported that the piezoelectricity is much more improve when PZT(lll) and PZT(llO) stagger evenly in thin films.In the present study, we aim to get the maximum piezoelectricity by using buffer layer which reduce the lattice mismatched. It has been reported that Au(t 1 t) takes first priority and orient PZT(I1 1), and Pt(lll) takes first priority and orient PZT(1 10). Therefore, the purpose of this study is a creation of the Au(lll) andPt(lll) alternative arranged buffer layer for the PZT(lll) and PZT(llO) polycrystalline structure growth by using the non-alloyed target (which is a Pt thin foil with pinholes on Au target) and by the ECR(Electron Cyclotron Resonance) sputtering deposition method. The sputtering rate of Au and Pt are considered as the area of the target which is Au and Pt was set to t :7. In order to invent the PZT buffer layer, the ECR sputtering target is made, which Au and Pt are equally distributed where the composition of Au and Pt is 1:l.As a result, the best sputtering condition of buffer layer production is 2256 eV in acceleration voltage, 0.75 sccm in Ar gas flow rate and 645 "C in heat-treatment temperature because the difference between the peak strength ratio of Au(l1 1) and the peak strength ratio of Pt(I1 1) is small. An analysis of variance is performed. It is understood that the heat-treatment temperature shows the contribution rate and the significance are 89.78 % and 99 %. Next, we use the response surface methodology, based on the result of the experimental design. Therefore, we decided that Ar gas flow rate and the heat-treatment temperature as 2 factors of the response surface methodology. The production condition is optimum when Ar gas flow rate is at 0.94 sccm and the heat treatment temperature is at 707 "C. Next, the 978-1-4577-1362-0/11/$26.00 ©2011 IEEE -285 -acceleration voltage is decided. Then, the Ar gas flow rate and the heat treatment temperature are fixed according to the optimized conditions and the experiment of acceleration voltage is conducted. The optimum production condition of the acceleration voltage is obtained and the result is 2394 eV. Moreover, we created PZT thin film on this Au-Pt buffer layer. As a result, this Au-Pt buffer layer is able to show higher piezoelectricity PZT.

We are developing device to measure blood glucose levels automatically. This device consist of a micropump of PZT(Lead Zirconate Titanate) actuator for sucking blood and administering insulin. The pump should be miniaturized, because it is too large to be carried.However, a decreasing of piezoelectricity affected by reduction volume of thinned PZT becomes a problem.Thus, we intended to create a PZT film which shows high piezoelectricity. In previous study, it was reported that the piezo-electricity becomes maximum when PZT(111) and PZT(110) stagger evenly in thin films. In this study, we aim to get the maximum piezoelectricity by using buffer layer which reduce the lattice-mismatched. It has been reported that Au(1l1) takes first priority and orient PZT(111), and Pt(lll) takes first priority and orient PZT(llO). Therefore, the purpose of this study is to create alternately arranged buffer layer of the Au(lll) andPt (1l1) for the PZT(1l1) and PZT(llO) polycrystalline structure growth by using the non-alloyed target (which is a Pt thin foil with pinholes on Au target) and by the ECR(Electron Cyclotron Resonance) sputtering deposition method. As a creation technique of the Au-Pt buffer layer, an easy sputtering technique was adopted by controlling the relative composition ratio. Here, by using this ECR sputtering machine, surface treatment on Si substrate by sub ion gun. Considering the sputtering rate of Au and Pt the target area of Au and Pt was set to 1 :3. Furthermore, the evaluation value of Au-Pt buffer layer is a peak strength ratio. Au and Pt is deposited on Si(1l1) substrate which Au(111) and Pt(111) are more prior in crystal growth. By removed natural oxidation film from Si substrate, Au(lll) and Pt(111) crystal orientation were considered to become more priority oriented. As for a washing technique of Si substrate, a natural oxide film removal method was performed by HF (Hydrofluoric Acid) and sub ion gun sputtering. Here, Au-Pt composite target were sputtered on Si substrate which washed with HF etching. We know that the crystal orientation of Au and Pt was dispersed. The crystal orientation is distributed because the surface of Si(lll) was changed, affected by HF. Therefore, a film of Au-Pt buffer layer is performed after changing a natural oxide 978-1-4673-4813-3/12/$31.00 ©2012 IEEE -201 -film removal technique to surface treatment by using sub ion gun sputtering. The natural oxide film on the Si substrate surface was removed by using ECR sputtering. After that, buffer layer is created by using the Au-Pt composite target. As a result from Au-Pt buffer layer which deposited as existed method, approximately 135 I % I of the increasing of the crystal growth was observed.Therefore, Au (111) and Pt (111) have more priority in crystal growth by a natural oxide film removal by using sputtering.

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