Riteshkumar Bhojani scite author profile

This paper describes how to measure the complete output characteristic of a high-voltage IGBT nondestructively up to the breakdown point and beyond. Hereby, a deep knowledge of the IGBT behaviour at high voltages and saturation currents is gained. To construct the complete characteristic, short-circuit and curve-tracer measurements are combined. The results are compared and recapitulated with semiconductor simulations of IGBT models fitted to experimental characteristics.

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Riteshkumar Bhojani

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