Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decreases the resistivity by three orders of magnitude, and also increases reflectivity across the visible spectrum. Moreover, phase-change memory based on GST is scalable, and is therefore a candidate to replace Flash memory for non-volatile data storage applications. The energy needed to switch between the two phases depends on the intrinsic properties of the phase-change material and the device architecture; this energy is usually supplied by laser or electrical pulses. The switching energy for GST can be reduced by limiting the movement of the atoms to a single dimension, thus substantially reducing the entropic losses associated with the phase-change process. In particular, aligning the c-axis of a hexagonal Sb(2)Te(3) layer and the 〈111〉 direction of a cubic GeTe layer in a superlattice structure creates a material in which Ge atoms can switch between octahedral sites and lower-coordination sites at the interface of the superlattice layers. Here we demonstrate GeTe/Sb(2)Te(3) interfacial phase-change memory (IPCM) data storage devices with reduced switching energies, improved write-erase cycle lifetimes and faster switching speeds.

Light strongly interacts with structures that are of a similar scale to its wavelength, typically nanoscale features for light in the visible spectrum. However, the optical response of these nanostructures is usually fixed during the fabrication. Phase change materials offer a way to tune the properties of these structures in nanoseconds. Until now, phase change active photonics has used materials that strongly absorb visible light, which limits their application in the visible spectrum. In contrast, Sb2S3 is an underexplored phase change material with a bandgap that can be tuned in the visible spectrum from 2.0 to 1.7 eV. This tuneable bandgap is deliberately coupled to an optical resonator such that it responds dramatically in the visible spectrum to Sb2S3 reversible structural phase transitions. It is shown that this optical response can be triggered both optically and electrically. High‐speed reprogrammable Sb2S3 based photonic devices, such as those reported here, are likely to have wide applications in future intelligent photonic systems, holographic displays, and microspectrometers.

We report a broadband polarization-independent perfect absorber with wide-angle near unity absorbance in the visible regime. Our structure is composed of an array of thin Au squares separated from a continuous Au film by a phase change material (Ge2Sb2Te5) layer. It shows that the near perfect absorbance is flat and broad over a wide-angle incidence up to 80° for either transverse electric or magnetic polarization due to a high imaginary part of the dielectric permittivity of Ge2Sb2Te5. The electric field, magnetic field and current distributions in the absorber are investigated to explain the physical origin of the absorbance. Moreover, we carried out numerical simulations to investigate the temporal variation of temperature in the Ge2Sb2Te5 layer and to show that the temperature of amorphous Ge2Sb2Te5 can be raised from room temperature to > 433 K (amorphous-to-crystalline phase transition temperature) in just 0.37 ns with a low light intensity of 95 nW/μm2, owing to the enhanced broadband light absorbance through strong plasmonic resonances in the absorber. The proposed phase-change metamaterial provides a simple way to realize a broadband perfect absorber in the visible and near-infrared (NIR) regions and is important for a number of applications including thermally controlled photonic devices, solar energy conversion and optical data storage.

The extreme electro-optical contrast between crystalline and amorphous states in phase-change materials is routinely exploited in optical data storage and future applications include universal memories, flexible displays, reconfigurable optical circuits, and logic devices. Optical contrast is believed to arise owing to a change in crystallinity. Here we show that the connection between optical properties and structure can be broken. Using a combination of single-shot femtosecond electron diffraction and optical spectroscopy, we simultaneously follow the lattice dynamics and dielectric function in the phase-change material Ge2Sb2Te5 during an irreversible state transformation. The dielectric function changes by 30% within 100 fs owing to a rapid depletion of electrons from resonantly bonded states. This occurs without perturbing the crystallinity of the lattice, which heats with a 2-ps time constant. The optical changes are an order of magnitude larger than those achievable with silicon and present new routes to manipulate light on an ultrafast timescale without structural changes.

The limit to which the phase change memory material Ge(2)Sb(2)Te(5) can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge(2)Sb(2)Te(5) has an increasingly dominant effect on the material's ability to change phase, and a profound increase in the crystallization temperature is observed when the Ge(2)Sb(2)Te(5) layer is less than 6 nm thick. We have found that the increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress, we have maintained the bulk crystallization temperature in Ge(2)Sb(2)Te(5) films just 2 nm thick.