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The preparation of transition metal chalcogenides using classical techniques is often confronted with serious problems. We have studied the preparation of a variety of transition metal sulfides, as thin films and bulk powders, comparing thermal and rf plasma techniques.The rf plasma approach allows us to use a simple sulfurizing agent H2S to prepare materials at low temperature. Without the aid of the rf plasma we must use either exotic sulfurizing agents or higher temperatures, which may have detrimental affects on the materials.Specifically we have studied the preparation of TiS2, MoSx and VS x. In all cases we have been able to prepare films or bulk powders at temperatures below 250 °C.

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