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Adhesion and subcritical debonding at interfaces between a silica-filled epoxy underfill and a silicon die passivated by silicon nitride and benzocyclobutene (BCB) layers were investigated. Adhesion was measured in terms of a critical value of the applied strain energy release rate, G (J/m2 ). Subcritical debond-growth rates in the range of 10−9 to 10−3 m/s were characterized as a function of applied G. Adhesion and subcritical debonding were affected by changes in interfacial chemistry and environment. The surprisingly large effect of adjacent layer elastic properties on interfacial adhesion was demonstrated with simulations of interfacial fracture using a mechanics of materials approach. Interfacial chemistry was modified by using different adhesion promoters, by varying the BCB cure state, and by using different epoxy underfill resins. The effects of environmental variables were studied with temperature- and humidity-controlled environments in order to determine the separate roles of moisture activity and temperature.

Amorphous diamond is a new material for surface-micromachined microelectromechanical systems (MEMS) that offers promise for reducing wear and stiction of MEMS components. The material is an amorphous mixture of 4-fold and 3-fold coordinated carbon with mechanical properties close to that of crystalline diamond. A unique form of structural relaxation permits the residual stress in the material to be reduced from an as-deposited value of 8 GPa compressive down to zero stress or even to slightly tensile values. Irreversible plastic deformation, achieved by heat treating elastically strained structures, is also possible in this material. Several types of amorphous diamond MEMS devices have been fabricated, including electrostatically-actuated comb drives, micro-tensile test structures, and cantilever beams. Measurements using these structures indicate the material has an elastic modulus close to 800 GPa, fracture toughness of 8 MPa·m 1/2 , an advancing H 2 O contact angle of 84° to 94°, and a surface roughness of 0.1 to 0.9 nm R.M.S. on Si and SiO 2 , respectively.

Advancements have been made in the diagnostic techniques to measure accurately the total radiated x-ray yield and power from z-pinch implosion experiments at the Z machine with high accuracy. The Z machine is capable of outputting 2 MJ and 330 TW of x-ray yield and power, and accurately measuring these quantities is imperative. We will describe work over the past several years which include the development of new diagnostics, improvements to existing diagnostics, and implementation of automated data analysis routines. A set of experiments on the Z machine were conducted in which the load and machine configuration were held constant. During this shot series, it was observed that the total z-pinch x-ray emission power determined from the two common techniques for inferring the x-ray power, a Kimfol filtered x-ray diode diagnostic and the total power and energy diagnostic, gave 449 TW and 323 TW, respectively. Our analysis shows the latter to be the more accurate interpretation. More broadly, the comparison demonstrates the necessity to consider spectral response and field of view when inferring x-ray powers from z-pinch sources.

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