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Optical backplane bus based on glass substrate with volume holographic gratings on top surface possesses a great ability to broadcast information. This feature is utilized to accomplish a bit-interleaved optical interconnect system. In this system, each daughter board sends only one bit per round and the bit pulses from different boards can cascade in a designed series when the transmitters are distributed in an appropriate manner. In this way, even slow electronic chips can be coordinated to generate an aggregate bandwidth up to 10Gbps, which is impossible to achieve with a multi-drop electrical bus. Besides the benefits of high data rate and low crosstalk, such a bit-interleaved architecture provides a secure data storage method. Each daughter board only stores a quarter bits of any byte, so that no single board has the entire information and security is enhanced. Alignment tolerance and power budget of the proposed optical interconnect system is theoretically calculated and experimentally verified. With collimating lenses, the packing density of transceivers is more than 4/cm 2 , and thus the signal density can be above 40Gbps/cm 2 /board. The insertion loss due to misalignment and beam divergence is measured to be approximately 3dB. The bit error rate (BER) of 10Gbps receivers with-12dBm sensitivity is estimated to be below 10-12 .

The electrical effects associated with pulsed laser irradiation of thermal oxides of silicon were investigated. Three of the functions performed by thermal oxides are control of field effects, junction passivation and electrical isolation. Representative oxide thicknesses suitable for these applications were studied: ≈ 100 nm; ≈ 500 nm and ≥, 1.0 μm respectively. The oxides were irradiated by a repetitively Q-switched Nd 3+:YAG laser operated at the fundamental frequency. The key laser parameters of energy and power density were varied over a wide range, from no change to the onset of discernible change and irreversible damage. The range of energy densities over which the oxide was not electrically degraded was established for each thickness of the oxide. This range of energy densities is compared to the useful range of energy densities for annealing polysilicon and for activating an implant through an oxide. The electrical data was obtained using a mercury probe and through the analysis of a large number of MOS capacitors formed on the irradiated oxides. Parameters measured include: breakdown voltages, surface state charge densities and flat band voltages.