Transceivers for 300 m multimode links, based on a serial 10 Gb laser source and incorporating receiver based Electronic Dispersion Compensation, EDC, are creating the first high volume application for 10 Gb FP (Fabry Perot). A highly reliable and high yield uncooled ridge Fp laser i s presented. The device shows excellent power characteristics in the 25-150 "C temperature range with very high TO (95 K in the temperature range 0-85 "C and still 78 K at 1.50 "C). Outstanding dynamic performances are also shown. 6dB of extinction ratio can be achieved up to 110 "C, by using a constant current swing of 50 mA OCIS codes: (140 5960) semiconductor laser
Centred 'optiqu& photmique et laser. Lk?partement dephyique, Universitd Low/, Pavillon Alerandre-Ymhon, Cite4 Uniwrsiroire. @&ec GIK 7P4, Cannda Tel.: (418) 656-2753: FAX (418) 656-2623; email: mpich@hyulavol.caMaddocked semiwnductor diode lasers are compact and simple sources of short optical pulses that are well suited for a number of applications. However their technology is not as mame as that of made-locked solid-state lascn and their potential has not been fully exploited yet. In this papcr we present our experimental results showing that piwsewnd pulses have been rcliably generated with a semiwnductor diode laser operaled with a ring cavity. An angle etched travelling-wave amplifier (InGaAs) designed lo be operaled at 860 nm was used as the active medium. The mode-locked operation was punly passive and it produced an average power of 3
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