Silicon, germanium, and related alloys, which provide the leading materials platform of electronics, are extremely inefficient light emitters because of the indirect nature of their fundamental energy bandgap. This basic materials property has so far hindered the development of group-IV photonic active devices, including diode lasers, thereby significantly limiting our ability to integrate electronic and photonic functionalities at the chip level. Here we show that Ge nanomembranes (i.e., single-crystal sheets no more than a few tens of nanometers thick) can be used to overcome this materials limitation. Theoretical studies have predicted that tensile strain in Ge lowers the direct energy bandgap relative to the indirect one. We demonstrate that mechanically stressed nanomembranes allow for the introduction of sufficient biaxial tensile strain to transform Ge into a direct-bandgap material with strongly enhanced light-emission efficiency, capable of supporting population inversion as required for providing optical gain.

Following an introduction to the history of the invention of the quantum cascade (QC) laser and of the band-structure engineering advances that have led to laser action over most of the mid-infrared (IR) and part of the far-IR spectrum, the paper provides a comprehensive review of recent developments that will likely enable important advances in areas such as optical communications, ultrahigh resolution spectroscopy and applications to ultrahigh sensitivity gas-sensing systems. We discuss the experimental observation of the remarkably different frequency response of QC lasers compared to diode lasers, i.e., the absence of relaxation oscillations, their high-speed digital modulation, and results on mid-IR optical wireless communication links, which demonstrate the possibility of reliably transmitting complex multimedia data streams. Ultrashort pulse generation by gain switching and active and passive modelocking is subsequently discussed. Recent data on the linewidth of free-running QC lasers ( 150 kHz) and their frequency stabilization down to 10 kHz are presented. Experiments on the relative frequency stability ( 5 Hz) of two QC lasers locked to optical cavities are discussed. Finally, developments in metallic waveguides with surface plasmon modes, which have enabled extension of the operating wavelength to the far IR are reported. I N THIS paper, we concentrate on reviewing recent developments in quantum cascade (QC) laser research in the areas of high-speed modulation, optical wireless, ultrashort pulse and Manuscript A. Michael Sergent has been with Bell Laboratories, Murray Hill, NJ, since July 1960. He has been in the semiconductor research area since the latter part of 1967, working on the luminescence properties of CdS and ZnSe materials systems and performing C-V, C-T, and deep-level transient spectroscopy measurements on GaAs. Since the early 1990s, he has been involved in semiconductor laser research, working on the electroabsorption modulated laser and most recently with the quantum-cascade laser. Most of his work in this endeavor revolves around the cleaving, mounting, and packaging of the devices.

The controlled application of strain in crystalline semiconductors can be used to modify their basic physical properties to enhance performance in electronic and photonic device applications. In germanium, tensile strain can even be used to change the nature of the fundamental energy band gap from indirect to direct, thereby dramatically increasing the interband radiative efficiency and allowing population inversion and optical gain. For biaxial tension, the required strain levels (around 2%) are physically accessible but necessitate the use of very thin crystals. A particularly promising materials platform in this respect is provided by Ge nanomembranes, that is, single-crystal sheets with nanoscale thicknesses that are either completely released from or partially suspended over their native substrates. Using this approach, Ge tensilely strained beyond the expected threshold for direct-band gap behavior has recently been demonstrated, together with strong strain-enhanced photoluminescence and evidence of population inversion. We review the basic properties, state of the art, and prospects of tensilely strained Ge for infrared photonic applications.

This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

We report on the generation of picosecond self-mode-locked pulses from midinfrared quantum cascade lasers, at wavelengths within the important molecular fingerprint region. These devices are based on intersubband electron transitions in semiconductor nanostructures, which are characterized by some of the largest optical nonlinearities observed in nature and by picosecond relaxation lifetimes. Our results are interpreted with a model in which one of these nonlinearities, the intensity-dependent refractive index of the lasing transition, creates a nonlinear waveguide where the optical losses decrease with increasing intensity. This favors the generation of ultrashort pulses, because of their larger instantaneous intensity relative to continuous-wave emission.