In the race to realize ultrahigh-speed processors, silicon photonics research is part of the efforts. Overcoming the silicon indirect bandgap with special geometry, we developed a concept of a metal-oxide-semiconductor field-effect transistor, based on a silicon quantum well structure that enables control of light emission. This quantum well consists of a recessed ultrathin silicon layer, obtained by a gate-recessed channel and limited between two oxide layers. The device's coupled optical and electrical properties have been simulated for channel thicknesses, varying from 2 to 9 nm. The results show that this device can emit near infrared radiation in the 1 to 2 μm range, compatible with the optical networking spectrum. The emitted light intensity can be electrically controlled by the drain voltage V ds while the peak emission wavelength depends on the channel thickness and slightly on V ds. Moreover, the location of the radiative recombination source inside the channel, responsible for the light emission, is also controllable through the applied voltages. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.