We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Fully printed wearable electronics based on two-dimensional (2D) material heterojunction structures also known as heterostructures, such as field-effect transistors, require robust and reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive contact layers. Solution processing of graphite and other layered materials provides low-cost inks enabling printed electronic devices, for example by inkjet printing. However, the limited quality of the 2D-material inks, the complexity of the layered arrangement, and the lack of a dielectric 2D-material ink able to operate at room temperature, under strain and after several washing cycles has impeded the fabrication of electronic devices on textile with fully printed 2D heterostructures. Here we demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-effect mobility of ~91 cm2 V−1 s−1, at low voltage (<5 V). This enables fully inkjet-printed electronic circuits, such as reprogrammable volatile memory cells, complementary inverters and OR logic gates.

Molecular memory devices with semiconducting single-walled carbon nanotubes constituting a channel of 150 nm in length are described. Data storage is achieved by sweeping gate voltages in the range of 3 V, associated with a storage stability of more than 12 days at room temperature. By annealing in air or controlled oxygen plasma exposure, efficient switching devices could be obtained from thin nanotube bundles that originally showed only a small gate dependence of conductance

The operation of four basic two-input logic gates fabricated with a single graphene transistor is demonstrated. Single-transistor operation is obtained in a circuit designed to exploit the charge neutrality point of graphene to perform Boolean logic. The type of logic function is selected by offset of the input digital signals. The merits and limitations of the fabricated gates are assessed by comparing their performance with that of conventional logic gates

The operation of a digital logic inverter consisting of one pp- and one nn-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. Both transistors initially exhibited pp-type behavior at low gate voltages, since air contamination shifted their Dirac points from zero to a positive gate voltage. Contaminants in one transistor were removed by electrical annealing, which shifted its Dirac point back and therefore restored nn-type behavior. Boolean inversion is obtained by operating the transistors between their Dirac points. The fabricated inverter represents an important step toward the development of digital integrated circuits on graphene