The plasma process is often used in the fabrication of semiconductor wafers. However, due to the lack of real-time etching control, this may result in some unacceptable process performances and thus leads to significant waste and lower wafer yield. In order to maximize the product wafer yield, a timely and accurately process fault or abnormal detection in a plasma reactor is needed. Optical emission spectroscopy (OES) is one of the most frequently used metrologies in in-situ process monitoring. Even though OES has the advantage of non-invasiveness, it is required to provide a huge amount of information. As a result, the data analysis of OES becomes a big challenge. To accomplish real-time detection, this work employed the sigma matching method technique, which is the time series of OES full spectrum intensity. First, the response model of a healthy plasma spectrum was developed. Then, we defined a matching rate as an indictor for comparing the difference between the tested wafers response and the health sigma model. The experimental results showed that this proposal method can detect process faults in real-time, even in plasma etching tools.

Plasma process tools, which usually cost several millions of US dollars, are often used in the semiconductor fabrication etching process. If the plasma process is halted due to some process fault, the productivity will be reduced and the cost will increase. In order to maximize the product/wafer yield and tool productivity, a timely and effective fault process detection is required in a plasma reactor. The classification of fault events can help the users to quickly identify fault processes, and thus can save downtime of the plasma tool. In this work, optical emission spectroscopy (OES) is employed as the metrology sensor for in-situ process monitoring. Splitting into twelve different match rates by spectrum bands, the matching rate indicator in our previous work (Yang, R.; Chen, R.S. Sensors 2010, 10, 5703–5723) is used to detect the fault process. Based on the match data, a real-time classification of plasma faults is achieved by a novel method, developed in this study. Experiments were conducted to validate the novel fault classification. From the experimental results, we may conclude that the proposed method is feasible inasmuch that the overall accuracy rate of the classification for fault event shifts is 27 out of 28 or about 96.4% in success.