A number of high-permittivity (j) dielectric oxides are currently being investigated as alternatives to SiO 2 as the dielectric insulating layer in sub-0.1 lm CMOS technology. Metal-organic (MO)CVD and atomic layer deposition (ALD) are promising techniques for the deposition of these high-j dielectric oxides. In this paper it is shown how the use of "designed" metal alkoxide precursors, containing bidentate donor-functionalized alkoxide ligands, in MOCVD leads to a marked improvement in the physical properties of the MOCVD precursors and process parameters. However, the use of such ligands is not as beneficial in the ALD process, highlighting the very different requirements of MOCVD and ALD precursors.

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, whereas the leakage current density is significantly higher for the MOCVD-grown films.

from 350 C to 650 C. Analysis by X-ray diffraction (XRD) shows that the films are amorphous at deposition temperatures of 400 C and below. At substrate temperatures above 450 C, the films adopt a monoclinic (a-HfO 2 ) phase with a fiber texture dependent upon growth temperature. Analysis by Auger electron spectroscopy (AES) shows that the films are nonstoichiometric and contain residual carbon (2.1 ± 11.6 at.-%) and nitrogen (0.4 ± 1.9 at.-%).

Inorganic chemistry Z 0100 MOCVD and ALD of High-κ Dielectric Oxides Using Alkoxide Precursors-[111 refs.]. -(JONES*, A. C.; ASPINALL, H. C.; CHALKER, P. R.; POTTER, R. J.; MANNING, T. D.; LOO, Y. F.; O'KANE, R.; GASKELL, J. M.; SMITH, L. M.; Chem. Vap. Deposition 12 (2006) 2-3, 83-98; Dep. Chem., Univ. Liverpool, Liverpool L69 3BX, UK; Eng.) -Schramke 21-220