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A displaced Gaussian profile is used to develop an analytical model for drain current and voltage characteristics of an n‐channel enhancement mode MOSFET. The averaged concentrations over the junction depth of source and drain are also considered as uniform case to compare the results. The threshold voltage in both the cases is calculated for different straggling ranges of the implanted profile. The validity of the averaged assumption for the uniform case and Taylor et. al.'s approximation in the present analysis are checked. The present results reveal that the earlier analyses of a MOSFET with an averaged Gaussian profile upto the junction depth is in error and better insight is achieved by considering a non‐uniform impurity profile. It is also found that Taylor et. al.'s approximation results in more error compared to the averaged case.

An analytical model, for drain current and voltage characteristics of n‐channel enhancement mode MOSFETs, developed in a previous work using a displaced Gaussian profile, is now applied to analyse an inveter. It is observed that MOSFETs having non‐uniform impurity profile below the gate region have higher conductivity in the non‐saturation region as compared with those having uniform doping, whereas the conductivity in the saturation region is reversed. It is found that an inverter with both transistors having non‐uniform doping profile switches from high to low state at lower input voltages as compared to the inverter with both transistors having uniform doping profiles. This will help in designing an MOS inverter without much geometrical constraints of the device.

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