Single-crystalline AlZnO nanomaterials were synthesized through a proposed alloy-evaporation deposition method at the low temperature of 550°C by thermal chemical vapor deposition. Transmission electron microscopy images show that AlZnO nanowires, or nanowire/nanotube junction structures, can be synthesized where the Al/ ͑Al+ Zn͒ atomic ratio is determined to be about 2.5 and 12 at. %, respectively, by electron energy loss spectrometry. Room-temperature cathodoluminescence measurements show that the AlZnO nanowires exhibit a strong ultraviolet emission, which shifts to a higher energy from 3.29 to 3.34 eV due to Al incorporation.

Diverse ZnO integrated nanostructures, constructed by epitaxial nanowalls and symmetric single-crystalline nanosheets, were successfully synthesized via a strain-assisted self-catalyzed process at a low temperature of 500°C. The nanostructures started with the growth of ZnO nanowires, nucleated on a rugged ZnO single-crystalline film via a strain-assisted self-catalyzed growth mechanism. The nanowalls were then formed by the interconnection of the nanowires. Finally, the nanosheets were grown from the edges of the nanowalls. The growth mechanisms were supported by direct experimental evidence. Room-temperature cathodoluminance spectra show a relatively strong and sharp ultraviolet emission as well as a weak and broad green emission. The integrated nanostructure may be applied to develop self-inclusive nanoelectronics.

The photosensing properties of flexible large‐area nanowire (NW)‐based photosensors are enhanced via in situ Al doping and substrate straining. A method for efficiently making nanodevices incorporating laterally doped NWs is developed and the strain‐dependent photoresponse is investigated. Photosensors are fabricated by directly growing horizontal single‐crystalline Al‐doped ZnO NW arrays across Au microelectrodes patterned on a flexible SiO2/steel substrate to enhance the transportation of carriers and the junction between NWs and electrodes. The Raman spectrum of the Al:ZnO NWs, which have an average diameter and maximum length of around 40 nm and 6.8 μm, respectively, shows an Al‐related peak at 651 cm−1. The device shows excellent photosensing properties with a high ultraviolet/visible rejection ratio, as well as extremely high maximum photoresponsivity and sensitivity at a low bias. Increasing the tensile strain from 0 to 5.6% linearly enhances the photoresponsivity from 1.7 to 3.8 AW−1 at a bias of 1 V, which is attributed to a decrease in the Schottky barrier height resulting from a piezo‐photonic effect. The high‐performance flexible NW device presented here has applications in coupling measurements of light and strain in a flexible photoelectronic nanodevice and can aid in the development of better flexible and integrated photoelectronic systems.

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