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Ring resonators with TiO2 core confinement factors from 0.07 to 0.42 are fabricated and measured for thermal sensitivity achieving -2.9 pm/K thermal drift in the best case. Materials used are CMOS compatible (TiO2, SiO2 and Si3N4) on a Si substrate. The under discussed role of stress in thermo-optic behavior is clearly observed when contrasting waveguides buried in SiO2 to those with etched sidewalls revealed to air. Multiphysics simulations are conducted to provide a theoretical explanation of this phenomenon in contrast to the more widely reported theories on thermo-optic behavior dominated by confinement factor.

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We investigate the athermal characteristics of silicon waveguides clad with TiO(2) designed for 1.3 µm wavelength operation. Using CMOS-compatible fabrication processes, we realize and experimentally demonstrate silicon photonic ring resonators with resonant wavelengths that vary by less than 6 pm/°C at 1.3 µm. The measured ring resonance wavelengths across the 20-50°C temperature range show nearly complete cancellation of the first-order thermo-optical effects and exhibit second-order thermo-optical effects expected from the combination of TiO(2) and Si.