The direct growth of graphene affording wafer‐scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal‐catalyst‐free growth of quasi‐suspended graphene on a Si wafer is demonstrated using an interface‐decoupling chemical vapor deposition strategy. The employment of lower‐than‐conventional H2 dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine‐tuned, producing a predominantly monolayer graphene film with wafer‐level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer‐free fabrication of high‐performance graphene‐based field‐effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi‐suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm2 V‐1 s‐1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer‐scale high‐quality graphene on dielectrics for practical graphene devices.

Direct synthesis of large‐area graphene on functional substrates via chemical vapor deposition has become a frontier research stream targeting practical applications. However, the batch production of transfer‐free graphene film with favorable quality and homogeneity remains a grand challenge. Herein, the direct growth of 12‐inch‐sized graphene is demonstrated over fused quartz in a batch manner. The key design of the synthetic route is the construction of a nano‐scale compartment to allow the formation of free molecular flow during growth, as well as to trap the hydroxyl species in situ released from the quartz substrates. Density functional theory calculations reveal that the hydroxyl species help decrease the energy barrier for feedstock decomposition and facilitate the carbon attachment to boost graphene growth. Thus‐prepared graphene possesses excellent optical transmittance (96% ± 1%) and electrical properties (1.22 ± 0.08 kΩ sq‒1). These findings unlock new opportunities for achieving batch production of graphene‐skinned functional materials with practical scalability and quality toward emerging uses.

Solar heating and radiative cooling techniques have been proposed for passive space thermal management to reduce the global energy burden. However, the currently used single‐function envelope/coating materials can only achieve static temperature regulation, presenting limited energy savings and poor adaption to dynamic environments. In this study, a sandwich‐structured fabric, composed of vertical graphene, graphene glass fiber fabric, and polyacrylonitrile nanofibers is developed, with heating and cooling functions integrated through multiband, synergistic, (solar spectrum and mid‐infrared ranges) and asymmetric optical modulations on two sides of the fabric. The dual‐function fabric demonstrates high adaption to the dynamic environment and superior performance in a zero‐energy‐input temperature regulation. Furthermore, it demonstrates ≈15.5 and ≈31.1 MJ m−2 y−1 higher annual energy savings compared to those of their cooling‐only and heating‐only counterparts, corresponding to ≈173.7 MT reduction in the global CO2 emission. The fabric exhibits high scalability for batch manufacturing with commercially abundant raw materials and facile technologies, providing a favorable guarantee of its mass production and use.