Thermal diffusivity and specific heat of 4H-SiC crystals as a function of temperature are measured, respectively, from room temperature to 600 °C. The thermal conductivity normal to c-axis was calculated from the measured data for both N-type and V-doped semi-insulating (SI) 4H-SiC single crystals. The thermal conductivity of N-type sample normal to c axis is proportional to T−1.26. It is approximately 280 W/mK at the room temperature. For V-doped SI sample, the thermal conductivity is proportional to T−1.256 and it is about 347 W/mK at room temperature, bigger than that of N-type sample. For semiconductor materials, total thermal conductivity is the sum of the contributions of lattice and carrier thermal conductivities. Temperature dependent Raman spectrum showed that the life time of phonons for N-type sample is shorter than that for SI sample. Accordingly thermal conductivity contributions from both lattice and carrier components are relatively small for N-type sample.

N-type 4H-SiC single crystals have been grown by N-doped sublimation method. The electrical properties of 4H-SiC single crystal wafers were assessed by Raman scattering and Hall measurement system. It has been found that the carrier concentrations in whole wafer are inhomogeneous. Due to facet effect, the carrier concentration in facet region is higher than that in other region. In addition, the carrier concentration in early growth stage is higher than that in later growth stage because of desorption of nitrogen existing in crucible and raw material at high temperature. Furthermore, some approaches to the growth of n-type 4H-SiC single crystals with homogeneous carrier concentration were proposed.

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Because the conditions under which semi-insulating 4H-SiC crystals can grow are so specific, other polytypes such as 15R and 6H can easily emerge during the growth process. In this work, a polytype stabilization technology was developed by altering the following parameters: growth temperature, temperature field distribution, and C/Si ratio. In the growth process of high-purity semi-insulating 4H-SiC crystals, the generation of undesirable polytypes was prevented, and a crystal 100 % 4H-SiC polytype was obtained. A high C/Si ratio in powder source was shown to be advantageous for the stabilization of the 4H polytype. Several methods were applied to evaluate the quality of crystals precisely; these methods include Raman mapping, X-ray diffraction, and resistivity mapping. Results showed that the 3inch-wafer was entirely made of 4H polytype, the mean value of FWHM was approximately 40 arcsec, and the distribution of the resistivity value was between 10 6 Ωcm and 10 7 Ωcm.