No abstract

Radiation effects such as TID and SEE including single and multiple bit upsets and SEFI modes need to be characterized and considered for space systems using COTS DRAM for natural space radiation environments. We present on-orbit data collected from commercial DRAM devices used in SSRs designed and built by SEAKR Engineering. Upset rates for on-orbit COTS DRAM memories are presented and compared to rates predicted using CREME96 [1] for three generations of commercial DRAM technology including 64 Mb EDO DRAM, 128 Mb SDRAM, and 256 Mb SDRAM. 1