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The methods of Differential Reflection Spectroscopy (DRS) and Atomic Force Microscopy (AFM) have been applied to study early stages of β-FeSi2 silicide formation. Some details on the Dynamic Standard method in DRS are presented. The imaginary part of the dielectric function of the β-FeSi2 film during its formation are calculated.

The process of self-organization of CrSi2 nanosize islands on Si(111)7 x 7 surface has been investigated during reactive deposition (RDE) of Cr at 500 degrees C by methods of low energy diffraction (LEED) and differential reflectance spectroscopy (DRS). Morphology of grown samples has been studied by atomic force microscopy (AFM). DRS data have demonstrated the semiconductor nature of silicide islands from the beginning of Cr deposition at 500 degreesC. The optimal temperature (750 0C) and optimal Si thickness (50 nm) have been determined for silicon molecular epitaxy (MBE) growth atop CrSi2 nanosize islands. Monolithic silicon-silicide heterostructures with multilayers of CrSi2 nanosize crystallites have been grown.

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