I–V and L–I characteristics as well as photocurrent in monolithic p‐InAsSbP/n‐InAs double heterostructure (λ = 3.4 μm) with several mesas/individual diodes grown onto a single n+‐InAs substrate have been measured at an activation of one of the diodes at ambient temperature in the presence of water, ethanol, and H20 + C2H5OH mixture at the n+‐InAs substrate surface. Adequately sufficient photocurrent values, the evidence for the absorption of internally reflected infrared radiation at the n+‐InAs substrate/liquid interface together with the correlation between the photocurrent and liquid chemical composition indicate the possibility of developing p‐InAsSbP/n‐InAs double heterostructures into a miniature monolithic “on‐chip” evanescent wave sensor of different liquids.

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