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In this paper, we report the effect of the write voltage and frequency on memristor-based resistive random access memory (RRAM). The above-said parameters have been investigated on the linear drift model of the memristor. With a variation of write voltage from 0.2 to 1.2 V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz, the corresponding effects on memory window, low resistance state (LRS) and high resistance state (HRS) have been reported. Thus, the lifetime (s) reliability analysis of memristor-based RRAM is carried out using the above results. It is found that the HRS is independent of the write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase the fact that the memristor possesses higher memory window and lifetime (s) in the higher voltage with lower frequency region, which has been attributed to less data losses in the memory architecture.

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In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.