A brief survey of the resonant Raman Auger effect is presented. An outline of experimental considerations and equipment is given. The theory of the resonant Auger effect is outlined within the context of a resonant photoionization process, which we hope will provide new researchers in the field a simplified feel for the physics involved. Our focus is on the atomic problem, but we include the connection to the molecular case with some accompanying discussion. Within this context we then discuss some examples which address a number of issues we feel are central to the subject: coherence between intermediate states, the treatment and meaning of correlation effects, the relation to the normal Auger effect, and the experimental complications due to incident-photon bandpass effects.

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The natural widths of the Ar 2p Ϫ1 , Kr 3d Ϫ1 , Xe 3d Ϫ1 , and Xe 4d Ϫ1 states have been determined from photoelectron spectra measured with very high resolution. Lifetime widths ⌫ L of 104Ϯ3 meV and 111 Ϯ3 meV were obtained for the Xe 4d 3/2 Ϫ1 and 4d 5/2 Ϫ1 states, respectively. In contrast, no differences in the inherent lifetime width could be found for the spin-orbit split components of Ar 2p (⌫ L ϭ118Ϯ4 meV) and Kr 3d (⌫ L ϭ88Ϯ4 meV) ionized states. The lifetime widths of the Xe 3d 3/2 Ϫ1 and 3d 5/2 Ϫ1 states were found to be 490Ϯ30 meV and 510Ϯ30 meV, respectively. The extracted lifetime widths are compared with the previously published experimental results.

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