Zntroduction Interrelations connecting the energy band gap and the high frequency refractive index are often required to estimate the high frequency refractive index of new materials. Therefore, attempts should be made to find new general relationships between these parameters. These parameters are of interest from the point of view of fundamental and technological considerations. Moss [l, 21 proposed a general relation based on the concept that in a dielectric energy levels are scaled down by a factor E$, i.e., n4E, = const (95).(1) The exponential behaviour of the above equation is similar to that of Moss [l, 21. This equation cannot be applied to materials with E, 5 0.Results and discussion Relation (4) is empirical in nature and it gives better values of n compared with the Ravindra relation. Equation (4) is applied to seventy semiconductors and n values are evaluated. Relevant data for the present work have been taken from Moss [2], Gupta and Ravindra [4], and Gopal [6]. The average percentage deviation calculated using the expression given below is also presented in Table 1, (nabs -nca,)/nobq x 100.Moss [2] critically examined and expressed that the Ravindra relation cannot occur if n 2 4.1 ( E , = 6.587) and also predicts unrealistic results for low n. In our analysis it is ') Anantapur 515003, India.

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