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We have developed a family of HfTi nanoSQUID gradiometers for different applications. These Nb-based nanoSQUIDs contain overdamped superconductor–normal conductor–superconductor (SNS) Josephson junctions with HfTi as a normal conducting barrier. The lateral dimensions of the junctions are about 200 nm × 200 nm, and the barrier thickness is nominally 30 nm. In order to enhance their practical use, the nanoSQUIDs are implemented with gradiometric SQUID and feedback loops, gradiometric transformers, and rf filters. The devices can be operated in an excitation field of up to a few mT with very low levels of nonlinearity. Due to the small loop size and the resulting low loop inductance, a white noise level down to 110 nΦ0/√Hz was achieved. The 1/f noise with a typical corner frequency below 1 kHz is dominated by critical current fluctuations. It can be reduced by applying bias reversal. A noise level of 600 nΦ0/√Hz was achieved at 1 Hz in a two-stage flux locked loop with bias reversal.

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In the recent past, considerable effort was spent on the development of superconducting quantum interference device (SQUID) designs for magnetic detection in the micro- and nano-scale. Where these novel nanoSQUIDs were mostly of a simple format, real applications require more elaborate designs including auxiliary components such as coils and transformers. Therefore, we have developed SQUID designs based on a Nb/HfTi/Nb thin-film technology which offers both, nano-patterning and waferscale manufacturing of complex design structures. Employing e-beam lithography and chemical–mechanical polishing process steps, the area of the superconductor–normal conductor–superconductor Josephson junctions of these nanoSQUIDs has been varied between 150 nm × 150 nm and 200 nm × 200 nm, whereas the thickness of the barrier is about 20 nm. In order to enable real practical applications, nanoSQUID designs with a number of implemented auxiliary components and design features, such as gradiometric feedback loops, gradiometric transformers, and rf filters, have been carefully investigated. This paper combines a summary of recent achievements with a presentation of detailed measurements of the device performance in magnetic fields of up to a few tens of millitesla. This investigation is intended to pave the way for future practical complex nanoSQUID tools.