am P.C. Bhat, am K. Burkett, am S. Cihangir, am O. Gutsche, am H. Jensen, am M. Johnson, am N. Luzhetskiy, am D. Mason, am T. Miao, am S. Moccia, am C. Noeding, am A. Ronzhin, am E. Skup, am W.J. Spalding, am L. Spiegel, am S. Tkaczyk, am F. Yumiceva, am A. Zatserklyaniy, am E. Zerev, am I. Anghel, an V.
The results of the CMS tracker alignment analysis are presented using the data from cosmic tracks, optical survey information, and the laser alignment system at the Tracker Integration Facility at CERN. During several months of operation in the spring and summer of 2007, about five million cosmic track events were collected with a partially active CMS Tracker. This allowed us to perform first alignment of the active silicon modules with the cosmic tracks using three different statistical approaches; validate the survey and laser alignment system performance; and test the stability of Tracker structures under various stresses and temperatures ranging from +15 °C to −15 °C. Comparison with simulation shows that the achieved alignment precision in the barrel part of the tracker leads to residual distributions similar to those obtained with a random misalignment of 50 (80) μm RMS in the outer (inner) part of the barrel.
Articles you may be interested in X-ray mask fabrication technology for 0.1 μm very large scale integrated circuits A multilayer inorganic antireflective system for use in 248 nm deep ultraviolet lithography In order to push resolution toward diffraction limits for 248 and 193 nm lithography, it is likely that some combination of optical enhancement may be needed. The attenuated phase shift mask approach may prove to be one of the less complex techniques available. Four materials are presented which may meet optical and process requirements for use as attenuated phase shift mask films: a molybdenum silicon oxide composite, an aluminum/aluminum nitride cermet, an understoichiometric silicon nitride, and a tantalum silicon oxide composite. All of these materials are shown to be capable of 4%-15% transmission at 193 nm with thicknesses that produce a phase shift. Evaluation of addition film properties including plasma reactive ion etch and long wavelength transmission helps in establishing materials which may be most production worthy.
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