S.C. Quinlan scite author profile

ChemInform Abstract The step-coverage of plasma-enhanced CVD oxide layers is studied in detail. It is found that, as the oxide to metal (Al-1% Si) thickness ratio decreases to unity, the step-coverage changes dramatically and re-entrant angles are formed. An adequate step-coverage of the film is obtained when the ratio is greater than 1.5. This scaled oxide is successfully implemented into a 3 µm CMOS double level metal gate array commitment process.

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S.C. Quinlan

PECVD Oxide Step‐Coverage Considerations for Use as an Interlayer Dielectric in CMOS DLM Processing

Optimization of polysilicon emitters for BiCMOS transistor design

ChemInform Abstract: PECVD Oxide Step‐Coverage Considerations for Use as an Interlayer Dielectric in CMOS DLM Processing.

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