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In micron-sized MOSFETS, the alternate capture and emission of carriers at individual Si:SiO, interface defects generates discrete switching in the source-drain resistance. The resistance changes are observed in the drain current as random telegraph signals, or as stepped transients after a strong perturbation of the trap occupation. The study of individual defects in MOSFETS has provided a powerful means of investigating the capture and emission kinetics of interface traps, has demonstrated the defect origins of low-frequency (1 / f ) noise in MOSFETS, and has provided new insight into the nature of defects at the Si:SiO, interface. Random telegraph signals in small MOSFETs

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We report the observation of a low-frequency plateau in conductance measurements on silicon metal-oxide-semiconductor capacitors. The signal is consistent with the ‘‘slow’’ states observed by other techniques, in particular those states responsible for 1/f noise in silicon metal-oxide-semiconductor field-effect transistors.

The photoreflectance spectra of ion beam synthesized β-FeSi2 reveals a direct gap at 0.815 eV and are shown to agree with the band gap value obtained by photoluminescence once the adjustments for the temperature difference and trap related recombination effects are made. This provides very convincing evidence for intrinsic light emission from ion beam synthesized β-FeSi2. Furthermore, we propose a simple model that helps to clarify the variety of inconsistent results obtained by optical absorption measurements. When the results of photoluminescence and photoreflectance are inserted into this model, we obtain good agreement with our measured optical absorption results.