One of the most critical functions of a computer is memory, as it would be impossible for it to function e ciently without it. The main memory of a computer is known as Random Access Memory (RAM). It stores operating system software, applications, and other data for the central processor unit (CPU) to perform operations swiftly and e ciently. Unfortunately, traditional static RAM (SRAMs) in aerospace applications suffers from high soft error issues such as Single Event Upset (SEU). To overcome the soft error problems, many Radiation-Hardened-Based Designs (RHBD) and Radiation-Hardened-Polar Designs (RHPD) have been developed, such as 12T We-Quatro, twelve-transistor (12T) Dice SRAM cells, and so on. However, they consume more total and static power, as well as have more delay and area. In this article, an RHPD and RHBD 12T SRAM cell is proposed to reduce power dissipation and area overhead. Compared to RHPD, the RHBD 12T SRAM cell devours less total and static power, and RHPD cells have less delay. The proposed SRAM cell is implemented in the 32 x 32 array architecture. The power consumption of a 32 x 32 SRAM array with a 12T RHBD SRAM cell is 1.33mW, which is 10.1% less than a 32 x 32 SRAM array with a 12T RHPD SRAM array is 4.23mW. Cadence virtuoso 6.1.5 at 45 nm Generic Process Design Kit (GPDK) technology le is used to simulate the comparative analysis for the SRAM cell.