In this paper we investigate the coherence properties of a quantum dot under two-photon resonant excitation in combination with an additional photo-neutralization laser. The photo-neutralization increases the efficiency of the excitation process and thus, the brightness of the source, by a factor of approximately 1.5 for biexciton-exciton pairs. This enhancement does not degrade the relevant coherences in the system; neither the single photon coherence time, nor the coherence of the excitation process.

We report on nonpolar GaN quantum dots embedded in AlN, grown on (11-20) 6H–SiC by plasma-assisted molecular-beam epitaxy. These dots are aligned in the growth plane and present a constant aspect ratio of 10. Their optical properties were studied as a function of GaN coverage. Especially, the variation of their emission energy as compared to that of (0001) GaN quantum dots is a clear fingerprint of the reduced internal electric field present in these nonpolar nanostructures. Time-resolved spectroscopy confirmed this result by revealing lifetimes in the few 100 ps range in contrast to the much longer ones obtained for the (0001) GaN quantum dots.