No abstract

The condition of the surface of germanium crystals has been studied by chemical, electron microscope, electron diffraction, and other techniques after several of the standard etching procedures. The surface is often partially covered by particles believed to be germanium monoxide. An etch has been devised which gives a controlled thickness of germanium monoxide on the crystal. Another etch minimizes the oxide formation. A simple light-scattering method for checking the surface cleanliness is described. The results of surface recombination velocity and channel effect measurements on crystals treated by these methods are described as is a method for obtaining low surface recombination on n-type crystals.

No abstract

Films of Cu1.8S have been made by flash evaporation. They have a resistivity of 6.2×10−4Ω·cm and an absorption coefficient to 1.5 eV radiation of 1.13×103 cm−1. The corresponding quantities for Cu1.8Se are: 1.6×10−4Ω·cm, and 1.18×103 cm−1. The resistivity of Cu1.8Te films increases with time. It is found that if during flash evaporation the ratio of partial pressures of Cu and Se at the substrate fluctuates then the film does not have the composition of the charge. Cu1.8S has potential applications for producing transparent conducting coatings on substrates which cannot be heated above room temperature.

No abstract