Rapid thermal annealing (4-7s) of 28Si and 9Be implants in VPE-grown In 0.53Ga 0.47As has produced n-and p-type active layers with controlled doping levels between 1017 and 3x108 cm-3.The multiple-implant schedules were based on R and AR data derived from SIMS measurements on p P single-energy implants. The activated n-and p-type layers have a good surface morphology and 300 K mobilities of 3000-7000 and 100-200 cm 2 /V-s, respectively. Data on implant schedules, electrical characteristics, carrier concentration profiles, and Rp /AR information are presented.