We describe our observation of coherent phonon oscillations of X-point zone-boundary transverseoptical (TO) mode, TO(X), in nitrogen-ion-implanted GaAs that has been annealed at high temperatures. With the TO(X) mode being forbidden from the Raman selection rule in pure zinc-blende GaAs, the lattice defects have provided additional momentum for phonon generation. Annealing-induced structural modifications were demonstrated through X-ray diffraction, transmission electron microscopy, and Raman scattering measurements. The polarization dependence of the TO(X) mode was compared with that of the longitudinal optical mode, and the temperature dependence of the TO(X) phonon dephasing was also investigated. V