We demonstrate the feasibility of white organic light-emitting diodes that exclude the transparent conductor indium-tinoxide. Instead, a highly conductive Orgacon™ PEDOT:PSS material in combination with a metal support structure is used as transparent anode and hole-injection layer. The PEDOT:PSS exhibits a conductivity of 460±20 S/cm and a work function of 5.35±0.05 eV. On ITO-free OLEDs on glass with an active area of ~6 cm ² the inclusion of 120 nm thick printed metal lines reduces the variation in brightness from 35% to 20%. The ITO-free concept based on PEDOT:PSS with printed metal structures is scaled up to large flexible OLEDs with a size of 150 cm 2 on a heat-stabilized Teonex® Polyethylene Naphtalate foil. The voltage distribution across the various electrodes was verified by a finite element model, allowing a prediction of the OLED brightness and homogeneity over large areas.
Using an optimized bridge geometry we have been able to make accurate measurements of the properties of YBa 2 Cu 3 O 7-d grain boundaries above T c .The results show a strong dependence of the change of resistance with temperature on grain boundary angle. Analysis of our results in the context of band-bending at the boundary allows us to estimate the height of the potential barrier present at the grain boundary interface.
Submicron YBa2Cu3O7−x
bicrystal grain boundary junctions have been fabricated, for the first time, by a focused ion
beam process. Although such a process has always been considered detrimental to the
YBa2Cu3O7−x
because of gallium contamination, high quality
24°
[001] tilt junctions characterized by RSJ current–voltage characteristics,
ICRN products of
the order of 1–4 × 104 A cm−2
at 77 K and Fraunhofer-like modulation patterns have been obtained. No significant
degradation has been observed over more than 3 months.
The critical current density JC
and the characteristic voltage ICRN
show a clear maximum for widths of the order of the Josephson
penetration depth. The asymptotic normal resistance shows a typical
(width)−1
dependence, indicating that the FIB process does not increase the grain boundary
resistivity of submicron junctions.
Experimental results clearly show that FIB is a very powerful tool for the fabrication of
high critical temperature superconducting circuits, requiring a small number of submicron
Josephson junctions, and for fundamental physics analysis. It also allow the final tuning or
repair of superconducting or more complex integrated superconducting–semiconducting
devices.
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