Application of PTH did not promote tooth movement in OVX rat, however, did lead to decrease in relapse tendency. Therefore, the application of PTH during orthodontic treatment of patients with osteoporosis should be carefully considered.

The radiographic findings of Pneumocystis carinii pneumonia (PCP) are various. The typical findings are diffuse, bilateral, symmetric, finely granular, or reticular infiltrates. In patients taking aerosol pentamidine, atypical findings may be the first manifestation. One interesting radiologic finding of PCP is that the pneumonia may spare the irradiated lung. We report PCP developed in a patient undergoing irradiation for lung cancer. High-resolution CT revealed diffuse, bilateral, and symmetric ground-glass opacities with septal thickening in both lungs; however, the radiation port was spared and appeared as the "photographic negative of post-radiation pneumonia." The distribution of the pneumonic infiltrates was altered by radiotherapy.

The authors demonstrate process integration of a back side illuminated ͑BSI͒ 2 megapixel complementary metal oxide semiconductor ͑CMOS͒ sensor utilizing three-dimensional ͑3D͒ integration and wafer manufacturing operations with a silicon-on-insulator epi wafer. The manufacturing feasibility of a BSI CMOS image sensor is demonstrated and compared between the front side illuminated ͑FSI͒ and BSI versions of the sensor with the same fabrication process. The 3D integration processes are evaluated to obtain stable performance of the BSI CMOS image sensor. The broadband quantum efficiency ͑81% for BSI͒ is improved 2.7 times over FSI sensitivity. The dark current and other key pixel performance measures are compared against an equivalent conventional sensor. Simulations that predict the performance of a full-color sensor are discussed.In a complementary metal oxide semiconductor ͑CMOS͒ image sensor, a light-receiving element, a digital control block, and a peripheral circuit such as an analog-to-digital converter are arranged in a limited area within a chip. Thus, an area ratio of a pixel array per chip area is limited to about 40%. Furthermore, a pixel size is greatly reduced for implementation of high-quality images. Accordingly, the amount of light that one light receiving element can collect is reduced and noise is increased, causing various problems such as image loss. Complex three-dimensional ͑3D͒ integration structures have many technologically relevant applications such as decreasing optical crosstalk in CMOS image sensors. Backilluminated imaging is receiving increasing attention as a solution to some of the problems that limit imager performance as pixel size decreases. The amount of available light per pixel decreases as pixel size decreases. A further challenge is to direct all the photons targeted at a given pixel to its corresponding photodiode as the pixel area decreases. Diffraction effects limit the photon energy that can be coupled into the photodiode. Optical advantages of back side illumination ͑BSI͒ include continually decreased pixel sizes, system cost reduction, and die size scaling. Picture resolution can be increased and total camera module size reduced. Several examples of silicon-on-insulator ͑SOI͒-based BSI sensors have been demonstrated in previous publications. [1][2][3][4] The dense vertical interconnection of multiple circuit layers has been developed using 3D circuit integration technology including wafer bonding, wafer thinning, and deep Si etching. 5-8 Burns et al. reported that a 3D integrated CMOS photodiode imager pixel array exploits the advantages of SOI technology to enable wafer-level stacking and micrometer-scale electrical interconnection of fully fabricated circuit wafers. 8 In this work, we focus on the development of a productionworthy monolithic sensor with 2.2 m pixels as a platform to extend the CMOS pixel roadmap into the submicrometer range. The performance of the BSI CMOS image sensor is demonstrated using 3D integration processes. The device was built using low-cost...